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Plasma deposited silicon nitride encapsulant for rapid thermal annealing of Si‐implanted GaAs

 

作者: Seonghearn Lee,   Anand Gopinath,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 3  

页码: 402-406

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.585034

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;ANNEALING;CHEMICAL VAPOR DEPOSITION;ION IMPLANTATION;REFRACTIVITY;SILICON NITRIDES;VAPOR DEPOSITED COATINGS;SURFACE COATING;GaAs:Si;SiN

 

数据来源: AIP

 

摘要:

Silicon nitride films were deposited by the plasma‐enhanced chemical vapor deposition (PECVD) method in a silane and nitrogen atmosphere as encapsulants for rapid thermal annealing of Si‐implanted GaAs. The deposition rate and refractive index of PECVD silicon nitride films were measured with varying the radio‐frequency (rf) power, chamber pressure, N2/SiH4ratio, and substrate temperature. A wide range of deposition parameters was used, and this range of rf power dependence has not been previously reported.

 

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