Quantum wells due to ordering in GaInP
作者:
Y. Hsu,
G. B. Stringfellow,
C. E. Inglefield,
M. C. DeLong,
P. C. Taylor,
J. H. Cho,
T.-Y. Seong,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 26
页码: 3905-3907
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122931
出版商: AIP
数据来源: AIP
摘要:
CuPt ordering results in a reduction of the band-gap energy of GaInP. Thus, heterostructures and quantum wells can be produced by simply varying the order parameter, without changing the solid composition. Changes in the order parameter can be induced by changes in growth conditions. The disordered/ordered/disordered quantum wells described here are grown by changing thePH3flow rate. Transmission electron microscopy results show that the quantum wells produced in this way are clearly defined, with abrupt interfaces. Low-temperature photoluminescence spectra show distinct peaks from quantum wells (QWs) of different widths. The QW photoluminescence peak energy increases with decreasing well width due to quantum size effects. The difference in band-gap energy between the ordered and disordered single layers is determined from photoluminescence excitation spectroscopy to be 0.06 eV. ©1998 American Institute of Physics.
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