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Performance of silicon cold cathodes

 

作者: G. G. P. van Gorkom,   A. M. E. Hoeberechts,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1986)
卷期: Volume 4, issue 1  

页码: 108-111

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583357

 

出版商: American Vacuum Society

 

关键词: SILICON;FIELD EMISSION;COLD CATHODE TUBES;CATHODES;PERFORMANCE;HOT ELECTRONS;P−N JUNCTIONS;CURRENT DENSITY;BRIGHTNESS;STABILITY;ADSORPTION;DESORPTION;CESIUM;MIGRATION;ELECTRON TEMPERATURE;SORPTIVE PROPERTIES;ATOM TRANSPORT;Si

 

数据来源: AIP

 

摘要:

The emission properties of cesiated silicon cold cathodes are described and the factors which ultimately limit the performance of such cathodes are discussed. It is tentatively concluded that the maximum available current density and brightness are limited by cesium migration and desorption, these maximum values (for emitters with 1 μm diam and with an efficiency of 1.5%) beingjvac,max≂1500 A/cm2andBmax≂9×106A/cm2sr (atV=10 kV). The long term stability of the emission is surprisingly good, in spite of adsorption of oxidizing gases from the vacuum. This indicates that there is a desorption of such gases too, probably due to the outgoing electrons at high current densities.

 

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