The minority charge‐carrier lifetime of undoped GaInP2has been investigated in disordered–ordered–disordered GaInP2double heterostructures. It is found that minority charge carriers can be confined to the ordered GaInP2if the growth is performed on a (100) 6° off towards [111¯] substrate. Minority charge‐carrier lifetimes of 1.2±0.35 &mgr;s are measured. These high lifetimes are the result of the extremely low interface recombination velocity of the disordered–ordered GaInP2interface. ©1995 American Institute of Physics.