Effect of Heat Treatment upon the Electrical Properties of Silicon Crystals
作者:
C. S. Fuller,
R. A. Logan,
期刊:
Journal of Applied Physics
(AIP Available online 1957)
卷期:
Volume 28,
issue 12
页码: 1427-1436
ISSN:0021-8979
年代: 1957
DOI:10.1063/1.1722672
出版商: AIP
数据来源: AIP
摘要:
Studies have been made of the process in which donors are introduced into silicon by heating in the temperature range 300°–500°C and are caused to disappear on heating at higher temperature. This phenomena is shown to depend on the conditions of growth and the heat‐treatment history of the crystal. Evidence is summarized which shows that oxygen is the impurity from which the donors are formed. The characteristics of the processes involved are described and possible mechanisms are discussed.
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