By surface passivation using anodic sulfidization, we demonstrated that the inverted surface effect which gives rise to negative Hall coefficients commonly measured inp‐type HgCdTe at low temperatures can be eliminated. Our results of Hall measurements as a function of magnetic field at 77 K and computer simulations allow us to distinguish two different existing models (with shunting or nonshuntingn‐type inversion layer) of the inverted surface effect. Bulk and surface transport parameters such as hole concentration, hole mobility, surface electron concentration, and surface electron mobility have been derived from computer best fits of experimental Hall coefficient curves.