作者: Gyula Eres,
期刊: Applied Physics Letters (AIP Available online 1995) 卷期: Volume 67, issue 12
页码: 1727-1729
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115030
出版商: AIP
数据来源: AIP
摘要:
A kinetic model based on two elementary reaction steps was used for exploring the prospects of atomic layer epitaxy (ALE) on the (100) surface of group IV semiconductors using hydridic source gases. Equating the chemisorption step with depletion of active sites, and the molecular hydrogen desorption step with regeneration of active sites allowed first‐principles kinetic modeling of the trends in thin film growth, unencumbered by the lack of mechanistic details of chemisorption and surface decomposition. The combination of first‐order depletion and first‐order regeneration steps was found to be most favorable for achieving ALE type behavior. The model shows that the ALE window is highly sensitive to the duration of the depletion (chemisorption) cycle suggesting short duration and well defined pulses as the most effective method of source gas delivery. ©1995 American Institute of Physics.
点击下载: PDF (109KB)
返 回
版权所有 © 2009 NSTL国家科技图书文献中心
咨询热线:800-990-8900 010-58882057 Email:service@nstl.gov.cn
地址:北京市复兴路15号 100038 京ICP备05017586号