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Linear dose dependence of ion beam mixing of metals on Si

 

作者: D. B. Poker,   B. R. Appleton,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 57, issue 4  

页码: 1414-1416

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.334501

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Helium backscattering spectroscopy was used to measure ion beam mixing of Au, V, Cr, and Pd on Si after28Si implantation. The depths of mixing showed linear dose dependences, in contrast to the more commonly observed square‐root dependence. Possible reasons for this discrepancy with earlier results are discussed.

 

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