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Silicidation using electron cyclotron resonance plasma

 

作者: M. Nagase,   H. Ishii,   K. Machida,   H. Akiya,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 3  

页码: 1087-1090

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586083

 

出版商: American Vacuum Society

 

关键词: ANNEALING;ELECTRON CYCLOTRON−RESONANCE;PLASMA;VLSI;MOLYBDENUM SILICIDES;DEPOSITION;COATINGS;MoSi

 

数据来源: AIP

 

摘要:

A new annealing technique for silicidation using electron cyclotron resonance plasma is proposed, and the method is successfully used to apply self‐aligned silicide of molybdenum on a Si substrate. The technique enables the temperature to be rapidly increased above 500 °C independent of substrate materials and a high degree of controllability enables reliable, self‐aligned silicidation on Si.

 

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