Temperature dependent electrically detected magnetic resonance studies on siliconpndiodes
作者:
P. Christmann,
W. Stadler,
B. K. Meyer,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 12
页码: 1521-1523
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113633
出版商: AIP
数据来源: AIP
摘要:
We report on electrically detected magnetic resonance (EDMR) studies in siliconpndiodes in the temperature range from 30 to 300 K. In the range from 150 to 300 K the resonance effect is, as usually observed, much larger than expected by spin polarization. From 150 K down to 30 K the spin resonance effect increases by a factor of 25, which is attributed to spin polarization of free electrons and electrons bound to recombination centers. Our investigation suggests that at least two different mechanisms contribute to the EDMR signal. ©1995 American Institute of Physics.
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