Undoped GaAs single crystals with ⟨123⟩ orientation are compressed at different strain rates in the temperature range between 730 and 900 °C, using the liquid encapsulation technique to prevent As loss. The resulting stress‐strain curves are characterized by five deformation stages, as is known for other semiconductors. From the lower yield point, at high strain rates, an activation energy of 1.37 eV and a stress exponent of 3.6 are deduced; these parameters nearly agree with those obtained earlier at lower temperatures and under a protective atmosphere of argon. At low strain rates deviations occur, whose origin is discussed. The analysis of the first stage of dynamical recovery (stage III), which shows a uniform behavior over the whole temperature and strain‐rate range, yields an activation energy of 2.3 eV and a stress exponent of 4.2. These values are discussed in terms of a diffusion‐controlled recovery mechanism. The second recovery stage (stage V) probably is governed by cross slip; the cross over of both recovery regimes takes place near 550 °C. The deformation behavior of GaAs is compared to that observed in other semiconductors.