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Use of impatt diodes as fast avalanche photodetectors

 

作者: D.J.Taylor,   R.G.Plumb,   P.Brook,   J.E.Caroll,  

 

期刊: IEE Journal on Solid-State and Electron Devices  （IET Available online 1977）
卷期: Volume 1, issue 5  

页码: 160-162

 

年代: 1977

 

DOI:10.1049/ij-ssed.1977.0024

 

出版商: IEE

 

数据来源: IET

 

摘要:

The required device structure for a fast avalanche photodiode is very similar to that of a good impatt diode, which suggests that conventional impatt technology may be used to produce goodquality very fast photodiodes. An experiment to demonstrate this propostion is reported.

 

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