Rotational-disordering phase transition ofC60(111) epitaxial films grown on GeS(001)
作者:
Alexei Glebov,
Volkmar Senz,
J. Peter Toennies,
Georg Gensterblum,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 5
页码: 2329-2333
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366041
出版商: AIP
数据来源: AIP
摘要:
The surface structures of C60films, epitaxially grown on the GeS(001) surface, were investigated from 90 to 350 K by helium atom scattering (HAS) diffraction. The present HAS results indicate a step-flow growth mode that is consistent with the results of previous x-ray scattering studies. By monitoring the diffraction intensities, the orientational-disordering phase transition is found to be completed at Tc=235K, which is about 25 K lower than the bulk transition temperature. This surface phase transition appears to be preempted by rotational disordering of C60molecules at defect sites, already initiated at Ts=130K. ©1997 American Institute of Physics.
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