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Integration of materials and processes for reliable silicon interconnections*

 

作者: J. Paraszczak,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 4  

页码: 2835-2838

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587201

 

出版商: American Vacuum Society

 

关键词: INTEGRATED CIRCUITS;SILICON;METALLIZATION;ALUMINIUM ALLOYS;COPPER;TUNGSTEN;GOLD;LITHOGRAPHY;ETCHING;CVD;SPUTTERED MATERIALS;SILICON OXIDES;Si;SiO2;Al;Cu;W;Au

 

数据来源: AIP

 

摘要:

As device densities in integrated circuits have grown, the number of connections between them has followed, resulting in larger chips with increased numbers of layers of metal wiring. Traditionally these layers of wiring were fabricated using aluminum and its alloys for the conductor and silicon oxide as the dielectric and insulator. New combinations of dielectrics and metals promise improved performance and increased reliability, which can require alternative methods of fabrication.

 

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