Influence of GaAs surface stoichiometry on the interface state density of as‐grown epitaxial ZnSe/epitaxial GaAs heterostructures
作者:
J. Qiu,
Q.‐D. Qian,
R. L. Gunshor,
M. Kobayashi,
D. R. Menke,
D. Li,
N. Otsuka,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 13
页码: 1272-1274
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102534
出版商: AIP
数据来源: AIP
摘要:
Epitaxial ZnSe/epitaxial GaAs interfaces have been formed by molecular beam expitaxy and evaluated by several techniques including capacitance‐voltage measurements. In the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as‐grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.
点击下载:
PDF
(421KB)
返 回