Si Epitaxial Growth by Iodide Transport Between Piled‐Up Pellets
作者:
R. M. A. Lieth,
A. G. M. Eggels,
期刊:
Journal of Applied Physics
(AIP Available online 1964)
卷期:
Volume 35,
issue 10
页码: 3015-3016
ISSN:0021-8979
年代: 1964
DOI:10.1063/1.1713147
出版商: AIP
数据来源: AIP
摘要:
Vapor phase transport of Si over a short distance by means of the iodide and subsequent epitaxial growth on a Si substrate is described. Both the source and the substrate were biconcavely shaped pellets piled up in a silica ampule. The furnace was vertical and the temperature ranged from 1100°–1200°C, giving rise to a slight temperature gradient over the length of the ampule.
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