A critical evaluation is presented of the thermodynamic properties of six disilicides and one monosilicide that are important in the manufacture of very large scale integrated circuits. Values of the standard molar enthalpies of formation &Dgr;fH○matT=298.15 K andp°=0.1 MPa are recommended as follows: WSi2, −(79±5) kJ⋅mol−1; MoSi2, −(137±4) kJ⋅mol−1; TiSi2, −(171±11) kJ⋅mol−1; CoSi2, −(103±15) kJ⋅mol−1; NiSi2, −(88±12) kJ⋅mol−1; TaSi2, −(120±20) kJ⋅mol−1; and PtSi, −(119±7) kJ⋅mol−1. Equations are given for the molar enthalpy increments of some of the silicides along with a few evaluated standard Gibbs free energies of formation. Brief descriptions of methods of synthesis and limited structural information have also been included.