A pulsed electron beam generator has been developed with an energy density adjustable between 0.3 and 5 Joules/cm2, a pulse length of about 300 nsec and with a maximum electron energy variable between 10 and 25 keV. Pulsed Electron Beam Annealing (PEBA) has been successfully applied to ion implanted semiconductors, simple metals, compounds and amorphous thin films. Results are compared to those obtained with pulsed laser beam annealing and furnace annealing.