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Defect annealing investigation in ion implanted Si by CESR technique

 

作者: A.V. Dvurechensky,   N.N. Cerasimenko,   V.B. Glazman,  

 

期刊: Radiation Effects  （Taylor Available online 1976）
卷期: Volume 31, issue 1  

页码: 37-40

 

ISSN:0033-7579

 

年代: 1976

 

DOI:10.1080/00337577608234777

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The variations of both the linewidth δH[G] of the conduction electron spin resonance (CESR) and the conduction electron densityN[cm−2] in the ion implanted silicon layers during annealing at 300° to 1000°C are presented.

 

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