Atomic layer epitaxy of the Ga‐As‐In‐As superalloy
作者:
B. T. McDermott,
N. A. El‐Masry,
M. A. Tischler,
S. M. Bedair,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 22
页码: 1830-1832
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98484
出版商: AIP
数据来源: AIP
摘要:
Ga‐As‐In‐As superalloy has been grown by atomic epitaxy on InP substrates. This has been achieved by sequential exposure of the substrate to trimethylgallium, arsine, triethylindium, and arsine. The thickness of the deposited film is in excellent agreement with the predicted value based on the number of exposure cycles. These results demonstrate that atomic layer epitaxy offers the ultimate control for depositing thin films. The superalloy films have been characterized by transmission electron microscopy and photoluminescence.
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