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Ferroelectric gate transistors

 

作者: ThomasA. Rabson,   TimohyA. Rost,   He Lin,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1995)
卷期: Volume 6, issue 1-4  

页码: 15-22

 

ISSN:1058-4587

 

年代: 1995

 

DOI:10.1080/10584589508019350

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The characteristics of a field effect transistor with a lithium niobate gate insulator are reported. Shifts in the gate characteristics consistent with polarization switching have been observed. Comparisons with the results of some of the recently published theoretical models for ferroelectric gate transistors are made. Advantages and disadvantages of buffer layers in the gate structure are also discussed.

 

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