The photoluminescence (PL) spectra of C60molecules embedded in porous Si through both physical deposition and chemical coupling were measured. In addition to the PL peak of porous Si, a peak at 730 nm caused by perfect C60molecules and other peaks at 620 and 630 nm caused by imperfect C60molecules were observed. The peak at 620 nm measured in the sample with physically deposited C60is induced by C60adsorbed on the Si atoms of the pore wall, while the peak at 630 nm measured in the sample with chemically coupled C60molecules is caused by the coupled C60molecules. At room temperature, the PL intensity of C60embedded in the porous Si is obviously enhanced, and the transfer of carriers from porous Si grains into adjacent C60is considered to be responsible for the PL enhancement. ©1995 American Institute of Physics.