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An ion-beam-assisted process for high-TcJosephson junctions

 

作者: M. Q. Huang,   L. Chen,   Z. X. Zhao,   T. Yang,   J. C. Nie,   P. J. Wu,   X. M. Xiong,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 16  

页码: 2373-2375

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120031

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature(Tc)grain boundary Josephson junctions through a photoresist liftoff mask. TheYBa2Cu3O7(YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-likeI–Vcharacteristics. The well-defined Shapiro steps have been seen on theI–Vcurves under microwave radiation. The magnetic modulation of critical current of a 4 &mgr;m width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 &mgr;V at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of5.0×10−4 G.©1997 American Institute of Physics.

 

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