Asymmetrical source‐drain characteristics in in‐plane‐gated transistors written by focused ion beam
作者:
D. K. de Vries,
A. D. Wieck,
K. H. Ploog,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 12
页码: 6710-6714
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359085
出版商: AIP
数据来源: AIP
摘要:
We observe electrically asymmetrical source‐drain characteristics in in‐plane‐gated transistors with shaped channels, and investigate them for different geometries. We give a qualitative explanation of the asymmetry, which is supported by voltage contrast scanning electron micrographs and the measured interaction between two neighboring channels. These shaped channels show a much higher dc voltage gain than conventional in‐plane‐gated transistors. ©1995 American Institute of Physics.
点击下载:
PDF
(696KB)
返 回