Optical absorption of free‐standing porous silicon films
作者:
M. H. Chan,
S. K. So,
K. W. Cheah,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 79,
issue 6
页码: 3273-3275
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.361216
出版商: AIP
数据来源: AIP
摘要:
The optical absorptions of anodically etchedp+andn+porous silicon (PS) films were investigated by photothermal deflection spectroscopy. Si–H stretching overtones and combination bands of Si–F and Si–H were observed. The defect model in hydrogenated amorphous silicon was used to explain the Urbach edge and the subgap absorptions of PS. The dangling bond defect densities in PS were estimated. ©1996 American Institute of Physics.
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