Annealing behavior of light‐induced defects in hydrogenated amorphous silicon alloys
作者:
S. Guha,
C. ‐Y. Huang,
S. J. Hudgens,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 1
页码: 50-51
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95001
出版商: AIP
数据来源: AIP
摘要:
We have studied the annealing behavior of light‐induced changes in room‐temperature photoconductivity and density of states at the Fermi level of hydrogenated amorphous silicon alloys for light soaking at temperatures between 100 to 400 K. Defects created at higher temperatures are found to be more difficult to anneal out. The results are discussed on the basis of the existing models for light‐induced effect.
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