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High‐resolution transmission electron microscope studies of an Al–Ge–Ni Ohmic contact to GaAs

 

作者: R. J. Graham,   H. H. Erkaya,   J. L. Edwards,   R. J. Roedel,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 5  

页码: 1502-1505

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584203

 

出版商: American Vacuum Society

 

关键词: TRANSMISSION ELECTRON MICROSCOPY;MICROSTRUCTURE;OHMIC CONTACTS;FABRICATION;ALUMINIUM NITRIDES;INTERFACE STRUCTURE;GALLIUM ARSENIDES;ALUMINIUM ALLOYS;NICKEL ALLOYS;GERMANIUM ALLOYS;GaAs;Al;Al3Ni;(Al,Ge,Ni)

 

数据来源: AIP

 

摘要:

The microstructure of an Al–Ge–Ni Ohmic contact top‐type GaAs has been investigated by cross‐sectional high resolution and analytical electron microscopy. The contact is found to consist of a continuous polycrystalline layer of Al3Ni adjacent to the GaAs with single crystals of the same phase and larger Ge rich structures on the surface. The contact interface is extremely planar and uniform with intrusive phases in the GaAs entirely absent. The possible reasons for this and the observed Ohmicity of the contact are discussed.

 

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