Direct correlation between reflection electron diffraction intensity behavior during the growth of AlxGa1−xAs/GaAs quantum wells and their photoluminescence properties
作者:
C. Deparis,
J. Massies,
G. Neu,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 3
页码: 233-235
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102840
出版商: AIP
数据来源: AIP
摘要:
The reflection high‐energy electron diffraction (RHEED) intensity level behavior during the growth of AlxGa1−xAs/GaAs quantum wells (QWs) is compared to the photoluminescence characteristics. The correlation between a decrease of the RHEED intensity level and the linewidth broadening of the excitonic QW transitions allows the unambiguous association of such a decrease with a roughening of the growth interface.
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