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Simulation of redistribution of donor impurity in silicon during rapid thermal annealing with regard for percolation effect

 

作者: A.F. Burenkov,   F.F. Komarov,   S.A. Fedotov,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1990）
卷期: Volume 115, issue 1-3  

页码: 45-48

 

ISSN:1042-0150

 

年代: 1990

 

DOI:10.1080/10420159008220552

 

出版商: Taylor & Francis Group

 

关键词: Redistribution;silicon;annealing;percolation effect;donor impurity;simulation;diffusion

 

数据来源: Taylor

 

摘要:

A model for the impurity redistribution in heavily doped silicon layers suggested by Mathiot and Pfister6is modified. Two channels of impurity diffusion are taken into account: a redistribution of impurity inside of a percolation cluster and a standard diffusion outside of that cluster. The parameters of the model are identified for the case of rapid thermal annealing of antimony in silicon. The modified model better describes the observed diffusivity dependences on temperature and doping level.

 

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