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A gauge for the precision measurement of the thickness of germanium and silicon wafers

 

作者: D.Baker,  

 

期刊: Proceedings of the IEE - Part B: Electronic and Communication Engineering  (IET Available online 1959)
卷期: Volume 106, issue 17S  

页码: 1168-1170

 

年代: 1959

 

DOI:10.1049/pi-b-2.1959.0212

 

出版商: IEE

 

数据来源: IET

 

摘要:

Some of the difficulties associated with the precision measurement of the thickness of thin germanium and silicon wafers, together with several possible methods of measurement, are briefly discussed. A gauge which employs the optical-lever principle is described in which frictional restraint of the moving parts is reduced to that of a knife edge alone, thus ensuring good repeatability of reading with probe pressures of less than 3g. The gauge covers the range 0–270 microns with an overall accuracy of ±0.5 micron.

 

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