A gauge for the precision measurement of the thickness of germanium and silicon wafers
作者:
D.Baker,
期刊:
Proceedings of the IEE - Part B: Electronic and Communication Engineering
(IET Available online 1959)
卷期:
Volume 106,
issue 17S
页码: 1168-1170
年代: 1959
DOI:10.1049/pi-b-2.1959.0212
出版商: IEE
数据来源: IET
摘要:
Some of the difficulties associated with the precision measurement of the thickness of thin germanium and silicon wafers, together with several possible methods of measurement, are briefly discussed. A gauge which employs the optical-lever principle is described in which frictional restraint of the moving parts is reduced to that of a knife edge alone, thus ensuring good repeatability of reading with probe pressures of less than 3g. The gauge covers the range 0–270 microns with an overall accuracy of ±0.5 micron.
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