We investigated the potentiality of a phosphorus‐doped silicon oxide (SiO:P) carrier‐free disordering source for applications in photonic devices integration schemes. This is accomplished in three successive steps by employing an InGaAsP/InGaAsP structure with compressively strained wells and lattice‐matched barriers designed for operation around ∼1.55 &mgr;m. First of all, we showed that the SiO:P encapsulant offers a good control over a wide range of disorder (blue shifts as high as ∼150 meV). Later on, the high optical quality of the disordered regions is demonstrated by detecting 300 K excitonic features in moderately blue‐shifted (∼40 meV) samples. And, finally, a first attempt of its application in integration technology is made by realizing a monolithic composite of a distributed feedback laser and a quantum‐confined stark effect electroabsorption modulator operating around 1.54 &mgr;m. ©1995 American Institute of Physics.