Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes
作者:
S. Madsen,
S. I. Bozhevolnyi,
K. Birkelund,
M. Mu¨llenborn,
J. M. Hvam,
F. Grey,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 1
页码: 49-53
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365847
出版商: AIP
数据来源: AIP
摘要:
Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium hydroxide. Numerical simulations of the electromagnetic field around the probe–sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. ©1997 American Institute of Physics.
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