Electronic transport properties of TiSi2thin films
作者:
V. Malhotra,
T. L. Martin,
J. E. Mahan,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1984)
卷期:
Volume 2,
issue 1
页码: 10-15
ISSN:0734-211X
年代: 1984
DOI:10.1116/1.582905
出版商: American Vacuum Society
关键词: titanium silicides;thin films;annealing;electric conductivity;temperature dependence;charge carriers;fermi level;holes;charged−particle transport;hall effect;magnetoresistance
数据来源: AIP
摘要:
High purity, single‐phase TiSi2thin films were prepared by deposition of titanium onto polycrystalline silicon layers followed by furnace annealing. Measurements of the temperature dependence of resistivity show that the material behaves as a classical metallic conductor, with an intrinsic resistivity proportional to temperature and having a room temperature value of ∼11μΩ cm. Geometrical magnetoresistance measurements on Corbino disk samples give a ‘‘representative’’mobility value (∼60 cm2/V‐s at room temperature) that mirrors the temperature dependence of resistivity. The very small Hall effect, taken together with a sizeable physical magnetoresistance, indicates the material is predominantly an electron conductor with a spectrum of mobility values for carriers on the Fermi surface because an isotropic, two‐band model cannot quantitatively account for the data.
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