Ion‐beam synthesis of a buried &bgr;‐FeSi2layer in Si is demonstrated. In the experiments Si(111) substrates have been implanted with 450‐keV Fe+ions. Samples have been analyzed by Rutherford backscattering spectrometry, x‐ray diffraction, and transmission electron microscopy. Annealing at 900 °C of samples implanted with 6×1017Fe+/cm2causes formation of a buried layer consisting of grains with lateral dimensions of approximately 5 &mgr;m. The epitaxy of &bgr;‐FeSi2(110) and/or (101) planes parallel to the Si(111) substrate plane is observed.