Optical and structural characteristics of Al2O3films deposited by the reactive ionized cluster beam method
作者:
H. Hashimoto,
L. L. Levenson,
H. Usui,
I. Yamada,
T. Takagi,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 63,
issue 1
页码: 241-244
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.340506
出版商: AIP
数据来源: AIP
摘要:
Al2O3films about 1000 A˚ thick were deposited on polished Si(100) substrates by the reactive ionized cluster beam method. It was found that the index of refraction, the etch rate in HF, and the microstructure of the films could be controlled by varying substrate temperatures up to 600 °C and acceleration voltages between 0.25 and 3 kV.
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