Cathodoluminescence atp‐nJunctions in GaAs
作者:
David B. Wittry,
David F. Kyser,
期刊:
Journal of Applied Physics
(AIP Available online 1965)
卷期:
Volume 36,
issue 4
页码: 1387-1389
ISSN:0021-8979
年代: 1965
DOI:10.1063/1.1714315
出版商: AIP
数据来源: AIP
摘要:
A decrease in the cathodoluminescence produced in GaAs by a scanning electron probe has been observed when the probe is close to ap‐njunction. The decreased intensity is shown to result from the drift of excess carriers across the junction. Measurements of the short‐circuit current of the diode confirm this interpretation and provide a means of estimating minority carrier diffusion lengths.
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