Observation of six electron traps in boron‐implanted, phosphorus‐doped silicon following annealing at temperatures near 400 °C is reported. Emission rate, cross section, and thermal activation energy measurements of trapped electrons are reported. Isochronal annealing information indicates that the traps are not present in the as‐implanted silicon; they are formed during heat treatment at temperatures near 400 °C. Comparison with previous studies indicated that the trap E200(0.424) [peak temperature (activation energy)] may be an oxygen and/or phosphorus complex, and that a second trap, E145(0.320), may be a phosphorus complex.