Electroluminescence from ZnSTe:Al alloy and investigation of local current distributions by conducting atomic force microscopy
作者:
J. M. Mao,
I. K. Sou,
J. B. Xu,
I. H. Wilson,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 1
页码: 14-18
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.589771
出版商: American Vacuum Society
关键词: ZnSTe:Al
数据来源: AIP
摘要:
Electroluminescent devices have been fabricated by depositing Al-doped ZnSTe onto GaAs substrates by molecular beam epitaxy. A moderately bright blue-light emission was observed at room temperature. Electroluminescence spectra reveal that light emission is mostly from impact excitation of Te isoelectronic centers in these structures. Surface morphologies and concurrent current images by using conducting atomic force microscopy indicate electrical inhomogeneity in such structures. Nonuniform light emission may be inferred from nonuniform current distributions on the submicrometer scale.
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