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Operation of a single-phase CCD on GaAs at 560 MHz

 

作者: A.J.Hayes,   J.T.Davies,   W.Eccleston,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  （IET Available online 1985）
卷期: Volume 132, issue 1  

页码: 34-36

 

年代: 1985

 

DOI:10.1049/ip-i-1.1985.0008

 

出版商: IEE

 

数据来源: IET

 

摘要:

A 32 bit, two/single phase CCD has been fabricated on GaAs using a simple four-stage fabrication process. Its operation is described at frequencies of up to 560 MHz. The charge transfer efficiency was estimated to be in excess of 0.998 per transfer below 100 MHz.

 

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