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Real‐time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)

 

作者: M. Mesrine,   J. Massies,   C. Deparis,   N. Grandjean,   E. Vanelle,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 68, issue 25  

页码: 3579-3581

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.116643

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical beam epitaxy have been investigated in real time using reflection high‐energy electron diffraction (RHEED). It is shown that In segregation occurs at both GaInP on GaAs and GaAs on GaInP interfaces. Resulting composition profiles are deduced from the RHEED data. ©1996 American Institute of Physics.

 

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