Electronic surface states on cleaved GaP(110): Initial steps of the oxygen chemisorption
作者:
G. M. Guichar,
C. A. Sebenne,
C. D. Thuault,
期刊:
Journal of Vacuum Science and Technology
(AIP Available online 1979)
卷期:
Volume 16,
issue 5
页码: 1212-1215
ISSN:0022-5355
年代: 1979
DOI:10.1116/1.570193
出版商: American Vacuum Society
关键词: GALLIUM PHOSPHIDES;SURFACES;PHOTOELECTRON SPECTROSCOPY;ENERGY LEVEL DENSITY;ENERGY GAP;OXYGEN;CHEMISORPTION;WORK FUNCTIONS;CLEAVAGE;ULTRAHIGH VACUUM
数据来源: AIP
摘要:
Using contact potential difference measurements and photoemission yield spectroscopy, the surface state distribution in the band gap has been obtained forn‐ andp‐type GaP(110) surfaces. All cleavages ofn‐type samples exhibit a band bending of approximately 0.5 eV. Correlatively, a small density of occupied surface states is found in the vicinity of the Fermi level. From comparison with calculations involving different kinds of surface reconstructions, it is thought to correspond to the tail of an intrinsic surface state band, mainly empty. Another surface state band, the shape and magnitude of which depend on the cleavage, is detected near the valence band maximum. Upon low oxygen exposure, while the band bending increases forn‐type samples, the surface state distribution in the gap is modified, new states appearing close to the valence band top. Possible explanations involving surface relaxation or missing surface atoms are suggested.
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