Density relaxation of silicon dioxide on (100) silicon during thermal annealing
作者:
K. Taniguchi,
M. Tanaka,
C. Hamaguchi,
K. Imai,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 5
页码: 2195-2198
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345563
出版商: AIP
数据来源: AIP
摘要:
Measurements of the refractive index of thermally grown oxide after annealing reveal that the density relaxation of the oxide is well described by a stretched exponential decay function. The experiments of two‐step oxidation show that oxygen diffusivity in the oxide exponentially decreases with the oxide density. The relation between the oxide density and the refractive index is well expressed by a simple power relation rather than the Lorenz–Lorenz formula.
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