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Density relaxation of silicon dioxide on (100) silicon during thermal annealing

 

作者: K. Taniguchi,   M. Tanaka,   C. Hamaguchi,   K. Imai,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 67, issue 5  

页码: 2195-2198

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345563

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Measurements of the refractive index of thermally grown oxide after annealing reveal that the density relaxation of the oxide is well described by a stretched exponential decay function. The experiments of two‐step oxidation show that oxygen diffusivity in the oxide exponentially decreases with the oxide density. The relation between the oxide density and the refractive index is well expressed by a simple power relation rather than the Lorenz–Lorenz formula.

 

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