AbstractThe kinetics of photogenerated carriers in AgBr crystals doped with trivalent iridium are investigated by photoconductivity measurements. The temperature dependence of the photoelectron lifetime is highly dependent on the level of iridium doping. Experiments show that photoelectron‐iridium reaction cross‐sections have a weak dependence on the number of vacancies bound to the iridium site. Estimates of the cross sections for electron capture a t IrBr 63−centers with one and two associated vacancies are