首页   按字顺浏览 期刊浏览 卷期浏览 Sidegating effect improvement of GaAs metal–semiconductor field effect transistor...
Sidegating effect improvement of GaAs metal–semiconductor field effect transistor by multiquantum barrier structure

 

作者: Ching‐Ting Lee,   Chang‐Da Tsai,   Chi‐Yu Wang,   Hung‐Pin Shiao,   Tzer‐En Nee,   Jia‐Nan Shen,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 14  

页码: 2046-2048

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.115073

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The sidegating effect in a GaAs metal–semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device. ©1995 American Institute of Physics.

 

点击下载:  PDF (72KB)



返 回