Spin Resonance in Electron Irradiated Silicon
作者:
G. D. Watkins,
J. W. Corbett,
R. M. Walker,
期刊:
Journal of Applied Physics
(AIP Available online 1959)
卷期:
Volume 30,
issue 8
页码: 1198-1203
ISSN:0021-8979
年代: 1959
DOI:10.1063/1.1735293
出版商: AIP
数据来源: AIP
摘要:
The spin resonance behavior in room temperature irradiatedn‐type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method. The dominant spectrum in each is discussed. The defects giving rise to the spectra are interpreted as containing impurity atoms and as having formed when the impurities trap mobile interstitials and/or vacancies. In quartz crucible grown silicon, the impurity may be oxygen. In the floating zone material, the impurity appears to be the phosphorus used in the doping. A 20°K irradiation and anneal is described which suggests the temperatures at which this defect motion is occurring. Features of the spin resonance spectra suggest that the vacancy may be the mobile effect.
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