Room temperature 1.54&mgr;m light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy
作者:
Chun-Xia Du,
Wei-Xin Ni,
Kenneth B. Joelsson,
Go¨ran V. Hansson,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 8
页码: 1023-1025
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119715
出版商: AIP
数据来源: AIP
摘要:
Schottky-type light emitting devices have been fabricated on Er-oxide doped Si layers grown by molecular beam epitaxy, in order to study the light emission process of Er-doped Si structures. By applying a reverse bias on the Schottky junction, Er ions incorporated within the depletion layer can be electrically excited via a hot electron impact process. Rather intense electroluminescence (EL) at a wavelength of 1.54&mgr;m has been observed at room temperature. The optoelectronic properties of the devices have been characterized by both input-power dependent and temperature dependent EL measurements. An activation energy value of∼160 meV responsible for luminescence thermal quenching has been obtained. ©1997 American Institute of Physics.
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