We report a post‐metallization annealing study of very thin oxide (2.4–3.2 nm), aluminum gate metal‐tunnel oxide‐(p) silicon devices. Voltage dependence measurements of both tunnel current and high‐frequency capacitance as functions of anneal time and temperature reveal that annealing the thin oxide devices after metallization leads to a decrease in interface state density, with dynamics which are similar to, though slower than, what has been observed in thicker oxide aluminum gate systems.