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Optical properties of quantum structures fabricated by focused Ga+ion beam implantation

 

作者: W. Beinstingl,   Y. J. Li,   H. Weman,   J. Merz,   P. M. Petroff,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 6  

页码: 3479-3482

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585827

 

出版商: American Vacuum Society

 

关键词: GALLIUM IONS;ION IMPLANTATION;QUANTUM WELL STRUCTURES;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;PHOTOLUMINESCENCE;CATHODOLUMINESCENCE;MONOLAYERS;INDIUM ARSENIDES;OPTICAL PROPERTIES;DIFFUSION;MOLECULAR BEAM EPITAXY;GaAs;(AlGa)As

 

数据来源: AIP

 

摘要:

High energy focused ion beam implantation of Ga is used to interdiffuse AlGaAs/GaAs quantum wells. Results from low temperature cathodoluminescence, time‐decay photoluminescence measurements and photolumuniscence excitation spectroscopy indicate a good quality of the interdiffused quantum wells. The broadened luminescence peaks are explained by spatial inhomogeneities of the interdiffusion. Quantum boxes were fabricated and studied by cathodoluminescence line scanning. The introduction of a few monolayers of InGaAs close to the quantum well resulted in a remarkable improvement of the homogeneity of the interdiffusion.

 

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