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Fabrication of silicon quantum wires by anisotropic wet chemical etching and thermal oxidation

 

作者: J. L. Liu,   Y. Shi,   F. Wang,   R. Zhang,   P. Han,   B. H. Mao,   Y. D. Zheng,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 5  

页码: 2137-2138

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588090

 

出版商: American Vacuum Society

 

关键词: DIMENSIONS;ETCHING;FABRICATION;OXIDATION;SILICON;SILICON OXIDES;Si;SiO2

 

数据来源: AIP

 

摘要:

Ultrafine silicon quantum wires with high‐quality Si/SiO2heterointerfaces are successfully fabricated by utilizing anisotropic wet chemical etching and subsequent thermal oxidation. It is also found that the lateral dimensions of silicon quantum wires can be well controlled by selecting the temperature of the thermal oxidation process. The cross‐sectional image from a scanning electron microscope shows silicon quantum wires of high quality with the linewidth down to 20 nm.

 

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