Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers
作者:
W. K. Liu,
J. Winesett,
Weiluan Ma,
Xuemei Zhang,
M. B. Santos,
X. M. Fang,
P. J. McCann,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 4
页码: 1708-1714
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364028
出版商: AIP
数据来源: AIP
摘要:
The molecular beam epitaxy of InSb/Si structures was accomplished using group IIa fluoride buffer layers. InSb growth was initiated by opening the In and Sb shutters simultaneously at substrate temperatures between 300 °C and 400 °C, producing In-terminated InSb(111)-A surfaces on CaF2/Si(111) substrates. Reflection high-energy electron diffraction, electron channeling, and high resolution x-ray diffraction measurements indicated that the InSb layers were of good crystalline quality. Electron mobilities at room temperature were as high as 65 000 cm2/V s for an 8-&mgr;m-thick InSb layer grown on CaF2/Si(111). On CaF2/Si(001) substrates, the InSb layers grew in the (111) orientation with two domains 90° apart. These InSb layers and ones grown on BaF2/CaF2/Si(111) substrates exhibited inferior electrical and structural properties compared to structures grown on CaF2/Si(111) substrates. ©1997 American Institute of Physics.
点击下载:
PDF
(507KB)
返 回